EMI Common-Mode Noise Suppression and Magnetic Elements Winding Loss Optimization Design Based on GaN Cascaded Power Module

Analysis and Suppression of Common Mode Interference in Three- Phase Power Rectifier Unit Based on Common Mode Transformer

Power rectifier unit can realize converting current by use of three-phase synchronous rectification bridge. The multiple parallel power units can amplify the capability of single generator and it is invaluable in battery charge, welding machine and electrochemistry fields. Nevertheless, the electromagnetic interference (EMI) which results from the speedy switch of power devices would affect the...

Behavioural Models for Common Mode EMI Filters

Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT

In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...

Suppression of magnetic noise in the fundamental-mode orthogonal fluxgate

A new important advantage has been discovered for the fundamental-mode operation of the orthogonal fluxgate employing an amorphous wire. It has been found that a great enough dc bias practically completely suppresses the magnetic noise generated in the fluxgate core by the ac-bias field; the fluxgate resolution becomes limited only by the excess electric noise in the ac-bias current. As a resul...

Noise Equivalent Power Optimization of Graphene- Superconductor Optical Sensors in the Current Bias Mode

In this paper, the noise equivalent power (NEP) of an optical sensor based ongraphene-superconductor junctions in the constant current mode of operation has beencalculated. Furthermore, the necessary investigations to optimize the device noise withrespect to various parameters such as the operating temperature, magnetic field, deviceresistance, voltage and current bias have been presented. By s...